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专利名称：FABRICATION OF A VERTICAL FIN FIELD
EFFECT TRANSISTOR WITH REDUCEDDIMENSIONAL VARIATIONS
发明人：Kangguo Cheng申请号：US15798886申请日：20171031
公开号：US201800601A1公开日：20180308
专利附图：
摘要：A method of forming a fin field effect transistor (finFET) having fin(s) withreduced dimensional variations, including forming a dummy fin trench within a perimeter
of a fin pattern region on a substrate, forming a dummy fin fill in the dummy fin trench,forming a plurality of vertical fins within the perimeter of the fin pattern region, includingborder fins at the perimeter of the fin pattern region and interior fins located within theperimeter and inside the bounds of the border fins, wherein the border fins are formedfrom the dummy fin fill, and removing the border fins, wherein the border fins are dummyfins and the interior fins are active vertical fins.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
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