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专利名称：Methods of processing a silicon substrate
for the formation of an integrated circuittherein
发明人：Lever, Reginald Frank,Raacke, Karl Heinz申请号：EP82101676申请日：19820304公开号：EP0066042A3公开日：19860820
专利附图：
摘要：A region of a silicon substrate is simultaneously etched and a silicon dioxidedeposit formed on the sidewalls of the etched region by masking the substrate except inthe region to be etched and subjecting the substrate to a plasma in a gas containing afluorohalogenohydrocarbon and oxygen, the oxygen content being between 40 and 80percent by volume. Thus, a trench (36) is plasma etched in a region of a silicon substrate
(30) not protected by a masking layer (32) and a silicon dioxide deposit (34) is formed onthe sidewalls of the trench (36). The fluorohalogenohydrocarbon may be CClF. Otherhydrocarbons containing chlorine or bromine or iodine, as well as fluorine, may also beused.
申请人：International Business Machines Corporation
代理人：DELETED Hobbs, Francis John (GB) R. 102(1) 30.03.1992
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